jamtJournal of Advanced Materials and TechnologiesJournal of Advanced Materials and Technologies2782-21922782-2206ФГБОУ ВО «ТГТУ»10.17277/jamt-2025-10-02-129-140jamt-73Research ArticleСтатьиЭлектронно-лучевая литография с использованием SiO2 в качестве чувствительного слояElectron beam lithography using SiO2 as a sensitive layerhttps://orcid.org/0000-0003-2007-208XЗубовД. Н.ZubovD. N.Зубов Дмитрий Николаевич, ведущий инженерМоскваDmitry N. Zubov, Lead EngineerMoscowhttps://orcid.org/0000-0002-2994-2291СоколовС. А.SokolovS. A.Соколов Сергей Александрович, кандидат химических наукМоскваSergey A. Sokolov, Cand. Sc. (Chem.), ResearcherMoscowhttps://orcid.org/0000-0001-6534-4179ЕгановаЕ. М.EganovaE. M.Еганова Елена Михайловна, кандидат технических наук, старший научный сотрудникМоскваElena M. Eganova, Cand. Sc. (Eng.), Senior ResearcherMoscowhttps://orcid.org/0000-0001-8515-3951ЯковлевВ. Б.YakovlevV. B.Яковлев Виктор Борисович, доктор физико-математических наук, профессор, главный научный сотрудникМоскваVictor B. Yakovlev, D. Sc. (Phys. and Math.), Professor, Chief ResearcherMoscowИнститут нанотехнологий микроэлектроники Российской академии наукРоссияInstitute of Nanotechnology of Microelectronics of the Russian Academy of SciencesRussian Federation202517022026102129140Copyright © Зубов Д.Н., Соколов С.А., Еганова Е.М., Яковлев В.Б., 20262026Зубов Д.Н., Соколов С.А., Еганова Е.М., Яковлев В.Б.Zubov D.N., Sokolov S.A., Eganova E.M., Yakovlev V.B.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://jamt.elpub.ru/jour/article/view/73

Изучены возможности и некоторые особенности прямой электронно-лучевой литографии с использованием слоя диоксида кремния SiO2 (выращенного термическим окислением) в качестве резиста, чувствительного к действию электронного луча, и проявляющего состава на основе водного раствора разбавленной буферизованной плавиковой кислоты. Найдены дополнительные факторы, влияющие на результат литографии (существование первоначального периода усиления эффекта экспонирования). Для объяснения данной особенности предложена гипотеза о механизме влияния внедренного в слой SiO2 (в процессе экспонирования) электрического заряда на процесс дальнейшего проявления скрытого изображения. В качестве меры, устраняющей проявления контаминационных явлений, предложен подход с использованием жертвенного слоя меди, наносимого на период проведения экспозиции. Приведено обоснование выбора металла жертвенного слоя на основе экспериментальных наблюдений и гипотезы о возможном химическом составе контаминационных пятен в экспонированных областях. Уточнены известные из литературы параметры процесса прямой литографии на SiO2. Найден нелинейный характер эффекта воздействия электронного луча на слой диоксида кремния, и предложены простые эмпирические зависимости, позволяющие количественно описать результат процесса литографии для случая крупномасштабных структур. Показано, что даже при использовании жертвенного слоя меди возможно достижение разрешения литографического процесса не хуже 30 нм.

 In this paper, we study the capabilities and some features of direct electron-beam lithography using a layer of silicon dioxide SiO2 (grown by thermal oxidation) as a resist sensitive to the action of the electron beam and a developing composition based on an aqueous solution of dilute buffered hydrofluoric acid. Additional factors influencing the lithography result (the existence of an initial period of exposure effect enhancement) are found. To explain this feature, | a hypothesis about the mechanism of the influence of the electric charge introduced into the SiO2 layer (during exposure) on the process of further development of the latent image is proposed. As a measure eliminating the manifestations of contamination phenomena, an approach using a sacrificial copper layer applied during the exposure period is proposed.

A rationale for choosing the metal of the sacrificial layer is given based on experimental observations and a hypothesis about the possible chemical composition of contamination spots in the exposed areas. The parameters of the direct lithography process on SiO2 known from the literature are clarified. The nonlinear nature of the effect of the electron beam on the silicon dioxide layer is found and simple empirical dependencies that allow a quantitative description of the result of the lithography process for the case of large-scale structures are proposed. It is shown that even when using a sacrificial copper layer, it is possible to achieve a lithographic process resolution of no worse than 30 nm.

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The authors declare that there are no conflicts of interest present.