<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">jamt</journal-id><journal-title-group><journal-title xml:lang="ru">Journal of Advanced Materials and Technologies</journal-title><trans-title-group xml:lang="en"><trans-title>Journal of Advanced Materials and Technologies</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2782-2192</issn><issn pub-type="epub">2782-2206</issn><publisher><publisher-name>ФГБОУ ВО «ТГТУ»</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17277/jamt-2025-10-04-321-328</article-id><article-id custom-type="elpub" pub-id-type="custom">jamt-79</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Наноструктурированные наноматериалы и наноустройства</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Nanostructured, nanoscale materials and nanodevices</subject></subj-group></article-categories><title-group><article-title>Метод устранения емкостной и шумовой составляющих из регистрируемого сигнала в полевом эмиссионном эксперименте</article-title><trans-title-group xml:lang="en"><trans-title>A method for eliminating capacitive and noise components from a recorded signal in a field emission experiment</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0005-5585-418X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Соков</surname><given-names>С. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Sokov</surname><given-names>S. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Соков Сергей Александрович, лаборант</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Sergei A. Sokov, Laboratory Assistant</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><email xlink:type="simple">sokovclan@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0008-3238-1668</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Нечаев</surname><given-names>М. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Nechaev</surname><given-names>M. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Нечаев Михаил Сергеевич, лаборант</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Mikhail S. Nechaev, Laboratory Assistant</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><email xlink:type="simple">msnechaev@stud.etu.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0003-7975-3151</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мутыгуллин</surname><given-names>Б. Э.</given-names></name><name name-style="western" xml:lang="en"><surname>Mutygullin</surname><given-names>B E.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Мутыгуллин Борис Эдуардович, лаборант</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Boris E. Mutygullin, Laboratory Assistant</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><email xlink:type="simple">borlin93@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-6073-6808</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Колосько</surname><given-names>А. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolosko</surname><given-names>A. G.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Колосько Анатолий Григорьевич, кандидат физико-математических наук, старший научный сотрудник</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Anatoly G. Kolosko, Cand. Sc. (Phys. and Math.), Senior Researcher</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><email xlink:type="simple">agkolosko@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5325-2226</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Филиппов</surname><given-names>С. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Filippov</surname><given-names>S. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Филиппов Сергей Владимирович, кандидат физико-математических наук, старший научный сотрудник</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Sergei V. Filippov, Cand. Sc. (Phys. and Math.), SeniorResearcher</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><email xlink:type="simple">f_s_v@list.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-2226-6304</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Попов</surname><given-names>Е. О.</given-names></name><name name-style="western" xml:lang="en"><surname>Popov</surname><given-names>E. O.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Попов Евгений Олегович, доктор физико-математических наук, ведущий научный сотрудник</p><p>ул. Политехническая, 26, Санкт-Петербург, 194021, Российская Федерация</p></bio><bio xml:lang="en"><p>Eugeni O. Popov, D. Sc. (Phys. and Math.), Leading Researcher</p><p>26, Politekhnicheskaya St., Saint Petersburg, 194021, Russian Federation</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Физико-технический институт им. А. Ф. Иоффе РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Ioffe Institute</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2025</year></pub-date><pub-date pub-type="epub"><day>24</day><month>02</month><year>2026</year></pub-date><volume>10</volume><issue>4</issue><fpage>321</fpage><lpage>328</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Соков С.А., Нечаев М.С., Мутыгуллин Б.Э., Колосько А.Г., Филиппов С.В., Попов Е.О., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Соков С.А., Нечаев М.С., Мутыгуллин Б.Э., Колосько А.Г., Филиппов С.В., Попов Е.О.</copyright-holder><copyright-holder xml:lang="en">Sokov S.A., Nechaev M.S., Mutygullin B.E., Kolosko A.G., Filippov S.V., Popov E.O.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://jamt.elpub.ru/jour/article/view/79">https://jamt.elpub.ru/jour/article/view/79</self-uri><abstract><p>Представлены новые способы устранения случайных и систематических ошибок, возникающих при регистрации вольтамперных характеристик полевых катодов в режиме быстрого сканирования высоким напряжением. Методы реализованы в среде графического программирования LabVIEW и интегрированы в программное обеспечение экспериментальной установки, которая регистрирует и обрабатывает данные полевой эмиссии в режиме реального времени. Разработанная программа состоит из трех модулей. Первый устраняет влияние постоянной наводки на сигналы тока и напряжения. Второй модуль устраняет систематическую ошибку синусоидальной формы, связанную с наличием емкости в измерительной цепи. Третий модуль уменьшает влияние на сигнал шумов, связанных с измерительным оборудованием, а также флуктуациями эмиссионной активности катода. Результирующая вольтамперная характеристика подвергается обработке в полулогарифмических координатах с применением уравнения Мерфи–Гуда. В результате обработки получаются значения эффективных параметров. Тестовый эксперимент был проведен с полевым катодом на основе многостенных углеродных нанотрубок, выращенных химическим осаждением из газовой фазы с использованием плазмы (метод PECVD). Методика также применялась для корректной оценки эмиссионных свойств катодов различного типа: на основе углеродных наночастиц, регулярных матриц острий и одноострийных катодов.  </p></abstract><trans-abstract xml:lang="en"><p>The paper presents new methods for eliminating random and systematic errors that occur when registering the current-voltage characteristics of field cathodes in the high-voltage fast scanning mode. The methods are implemented in the LabVIEW graphical programming environment and integrated into the experimental installation software, which registers and processes field emission data in real time. The developed program consists of three modules. The first one eliminates the effect of constant interference on current and voltage signals. The second module eliminates the systematic sinusoidal error associated with the presence of capacitance in the measuring circuit. The third module reduces the effect on the signal of noise associated with measuring equipment, as well as fluctuations in the emission activity of the cathode. The resulting current-voltage characteristic is processed in semi-logarithmic coordinates using the Murphy-Good equation. As a result of the processing, the values of the effective parameters are obtained. A test experiment was conducted with a field cathode based on multi-walled carbon nanotubes grown by the plasma-assisted chemical vapor deposition (PECVD-method). The technique was also used to accurately evaluate the emission properties of various types of cathodes: those based on carbon nanoparticles, regular matrix tips, and single-pointed cathodes.  </p></trans-abstract><kwd-group xml:lang="ru"><kwd>полевая эмиссия</kwd><kwd>углеродные нанотрубки</kwd><kwd>вольтамперная характеристика</kwd><kwd>обработка данных в режиме реального времени</kwd></kwd-group><kwd-group xml:lang="en"><kwd>field emission</kwd><kwd>carbon nanotubes</kwd><kwd>current-voltage characteristic</kwd><kwd>real-time data processing</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Kyritsakis A, Djurabekova F. A general computational method for electron emission and thermal effects in field emitting nanotips. Computational Materials Science. 2017;128:15-21. DOI:10.1016/j.commatsci.2016.11.010</mixed-citation><mixed-citation xml:lang="en">Kyritsakis A, Djurabekova F. A general computational method for electron emission and thermal effects in field emitting nanotips. Computational Materials Science. 2017;128:15-21. DOI:10.1016/j.commatsci.2016.11.010</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Allaham MM, Knápek A, Mousa MS, Forbes RG. User-friendly method for testing field electron emission data: technical report. In: Proceedings - 34th International Vacuum Nanoelectronics Conference (IVNC), 05-09 July 2021, Lyon, France: IEEE; 2021. pp. 1-2. DOI:10.1109/IVNC52431.2021.9600769</mixed-citation><mixed-citation xml:lang="en">Allaham MM, Knápek A, Mousa MS, Forbes RG. User-friendly method for testing field electron emission data: technical report. In: Proceedings - 34th International Vacuum Nanoelectronics Conference (IVNC), 05-09 July 2021, Lyon, France: IEEE; 2021. pp. 1-2. DOI:10.1109/IVNC52431.2021.9600769</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Chubenko O, Baturin SS, Kovi KK, Sumant AV, et al. Locally resolved electron emission area and unified view of field emission from ultrananocrystalline diamond films. ACS Applied Materials &amp; Interfaces. 2017; 9(38):33229-33237. DOI:10.1021/acsami.7b07062</mixed-citation><mixed-citation xml:lang="en">Chubenko O, Baturin SS, Kovi KK, Sumant AV, et al. Locally resolved electron emission area and unified view of field emission from ultrananocrystalline diamond films. ACS Applied Materials &amp; Interfaces. 2017; 9(38):33229-33237. DOI:10.1021/acsami.7b07062</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Kopelvski MM, Galeazzo E, Peres HEM, Ramirez-Fernandez FJ, et al. Potentialities of a new dedicated system for real time field emission devices characterization: a case study. In: Proceedings - 4th International Symposium on Instrumentation Systems, Circuits and Transducers (INSCIT), 26-30 August 2019, Sao Paulo, Brazil: IEEE; 2019. p. 1-5. DOI:10.1109/inscit.2019.8868705</mixed-citation><mixed-citation xml:lang="en">Kopelvski MM, Galeazzo E, Peres HEM, Ramirez-Fernandez FJ, et al. Potentialities of a new dedicated system for real time field emission devices characterization: a case study. In: Proceedings - 4th International Symposium on Instrumentation Systems, Circuits and Transducers (INSCIT), 26-30 August 2019, Sao Paulo, Brazil: IEEE; 2019. p. 1-5. DOI:10.1109/inscit.2019.8868705</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Gotoh Y, Kawamura Y, Niiya T, Ishibashi T, et al. Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics. Applied Physics Letters. 2007;90(20). DOI:10.1063/1.2740199</mixed-citation><mixed-citation xml:lang="en">Gotoh Y, Kawamura Y, Niiya T, Ishibashi T, et al. Derivation of length of carbon nanotube responsible for electron emission from field emission characteristics. Applied Physics Letters. 2007;90(20). DOI:10.1063/1.2740199</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Reichert I, Olney P, Lahmer T. Influence of the error description on model-based design of experiments. Engineering Structures. 2019;193:100-109. DOI:10.1016/j.engstruct.2019.05.002</mixed-citation><mixed-citation xml:lang="en">Reichert I, Olney P, Lahmer T. Influence of the error description on model-based design of experiments. Engineering Structures. 2019;193:100-109. DOI:10.1016/j.engstruct.2019.05.002</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Ayari A, Vincent P, Perisanu S, Poncharal P, et al. Is the linear relationship between the slope and intercept observed in field emission S-K plots an artifact? Journal of Vacuum Science &amp; Technology B. 2024;42(5). DOI:10.1116/6.0003828</mixed-citation><mixed-citation xml:lang="en">Ayari A, Vincent P, Perisanu S, Poncharal P, et al. Is the linear relationship between the slope and intercept observed in field emission S-K plots an artifact? Journal of Vacuum Science &amp; Technology B. 2024;42(5). DOI:10.1116/6.0003828</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Funayama K, Tanaka H, Hirotani J, Shimaoka K, et al. Noise modeling in field emission and evaluation of the nano-receiver in terms of temperature. IEEE Access. 2019;7:57820-57828. DOI:10.1109/access.2019.2913692</mixed-citation><mixed-citation xml:lang="en">Funayama K, Tanaka H, Hirotani J, Shimaoka K, et al. Noise modeling in field emission and evaluation of the nano-receiver in terms of temperature. IEEE Access. 2019;7:57820-57828. DOI:10.1109/access.2019.2913692</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Persaud A. Analysis of slope-intercept plots for arrays of electron field emitters. Journal of Applied Physics. 2013;114(15). DOI:10.1063/1.4825051</mixed-citation><mixed-citation xml:lang="en">Persaud A. Analysis of slope-intercept plots for arrays of electron field emitters. Journal of Applied Physics. 2013;114(15). DOI:10.1063/1.4825051</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Ji X, Yutong S, Yongjiao S, Wenxin Y, et al. Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor. Journal of Physics D: Applied Physics. 2020;53(13):135301. DOI:10.1088/1361-6463/ab642f</mixed-citation><mixed-citation xml:lang="en">Ji X, Yutong S, Yongjiao S, Wenxin Y, et al. Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor. Journal of Physics D: Applied Physics. 2020;53(13):135301. DOI:10.1088/1361-6463/ab642f</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Di Bartolomeo A, Giubileo F, Iemmo L, Romeo F, et al. Leakage and field emission in side-gate graphene field effect transistors. Applied Physics Letters. 2016;109(2). DOI:10.1063/1.4958618</mixed-citation><mixed-citation xml:lang="en">Di Bartolomeo A, Giubileo F, Iemmo L, Romeo F, et al. Leakage and field emission in side-gate graphene field effect transistors. Applied Physics Letters. 2016;109(2). DOI:10.1063/1.4958618</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Koochack Zadeh M, Hinrichsen V, Kuivenhoven S. Measurement of field emission current during switching of capacitive current in vacuum. Proceedings – International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (2010), 30 August 2010 – 03 September 2010, Braunschweig, Germany: IEEE; 2010. p. 249-252. DOI:10.1109/deiv.2010.5625786</mixed-citation><mixed-citation xml:lang="en">Koochack Zadeh M, Hinrichsen V, Kuivenhoven S. Measurement of field emission current during switching of capacitive current in vacuum. Proceedings – International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (2010), 30 August 2010 – 03 September 2010, Braunschweig, Germany: IEEE; 2010. p. 249-252. DOI:10.1109/deiv.2010.5625786</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Arkhipov AV. Hysteresis of pulsed characteristics of field emission from nanocarbon films. Technical Physics. 2005;50(10):1353. DOI:10.1134/1.2103285</mixed-citation><mixed-citation xml:lang="en">Arkhipov AV. Hysteresis of pulsed characteristics of field emission from nanocarbon films. Technical Physics. 2005;50(10):1353. DOI:10.1134/1.2103285</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Popov EO, Kolosko AG, Filippov SV, Terukov EI, et al. Comparison of macroscopic and microscopic emission characteristics of large area field emitters based on carbon nanotubes and graphene. Journal of Vacuum Science &amp; Technology B. 2020;38(4):043203.. DOI:10.1116/6.0000072</mixed-citation><mixed-citation xml:lang="en">Popov EO, Kolosko AG, Filippov SV, Terukov EI, et al. Comparison of macroscopic and microscopic emission characteristics of large area field emitters based on carbon nanotubes and graphene. Journal of Vacuum Science &amp; Technology B. 2020;38(4):043203.. DOI:10.1116/6.0000072</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Kitsyuk EP, Vasilevskaya YO, Volovlikova OV, Eganova EM, et al. Catalytic particles formation from thin nickel films for the synthesis of multi-walled carbon nanotubes. Carbon. 2024;229:119509. DOI:10.1016/j.carbon.2024.119509</mixed-citation><mixed-citation xml:lang="en">Kitsyuk EP, Vasilevskaya YO, Volovlikova OV, Eganova EM, et al. Catalytic particles formation from thin nickel films for the synthesis of multi-walled carbon nanotubes. Carbon. 2024;229:119509. DOI:10.1016/j.carbon.2024.119509</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Popov EO, Kolosko AG, Filippov SV. A test for compliance with the cold field emission regime using the elinson-schrednik and forbes-deane approximations (Murphy-good plot). Technical Physics Letters. 2020;46(9):838-842. DOI:10.1134/s1063785020090096</mixed-citation><mixed-citation xml:lang="en">Popov EO, Kolosko AG, Filippov SV. A test for compliance with the cold field emission regime using the elinson-schrednik and forbes-deane approximations (Murphy-good plot). Technical Physics Letters. 2020;46(9):838-842. DOI:10.1134/s1063785020090096</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Kolosko AG, Filippov SV, Popov EO. Influence of current-voltage characteristic processing methods on the value of effective parameters of field cathodes. Fizika tverdogo tela = Physics of the Solid State. 2023; 65(12):2162. DOI:10.61011/FTT.2023.12.56749.5126k (In Russ.)</mixed-citation><mixed-citation xml:lang="en">Kolosko AG, Filippov SV, Popov EO. Influence of current-voltage characteristic processing methods on the value of effective parameters of field cathodes. Fizika tverdogo tela = Physics of the Solid State. 2023; 65(12):2162. DOI:10.61011/FTT.2023.12.56749.5126k (In Russ.)</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Jarvis JD, Andrews HL, Brau CA, Choi BK, et al. Adsorbate modification of emission from diamond field emitters and carbon nanotubes. In: Proceedings of the 2009 Free-Electron Laser Conference, 23-28 August 2009, Liverpool, UK.</mixed-citation><mixed-citation xml:lang="en">Jarvis JD, Andrews HL, Brau CA, Choi BK, et al. Adsorbate modification of emission from diamond field emitters and carbon nanotubes. In: Proceedings of the 2009 Free-Electron Laser Conference, 23-28 August 2009, Liverpool, UK.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Popov EO, Kolosko AG, Chumak MA, Filippov SV. Ten approaches to define the field emission area. Technical Physics. 2019;64(10):1530-1540. DOI:10.1134/s1063784219100177</mixed-citation><mixed-citation xml:lang="en">Popov EO, Kolosko AG, Chumak MA, Filippov SV. Ten approaches to define the field emission area. Technical Physics. 2019;64(10):1530-1540. DOI:10.1134/s1063784219100177</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Djuzhev NA, Demin GD, Filippov NA, Evsikov ID, et al. Development of technological principles for creating a system of microfocus X-ray tubes based on silicon field emission nanocathodes. Technical Physics. 2019;64(12): 1742-1748. DOI:10.1134/s1063784219120053</mixed-citation><mixed-citation xml:lang="en">Djuzhev NA, Demin GD, Filippov NA, Evsikov ID, et al. Development of technological principles for creating a system of microfocus X-ray tubes based on silicon field emission nanocathodes. Technical Physics. 2019;64(12): 1742-1748. DOI:10.1134/s1063784219120053</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">Masalov SA, Popov EO, Kolosko AG, Filippov SV, et al. Liquid-metal field electron source based on porous gap. Technical Physics. 2017;62(9):1424-1430. DOI: 10.1134/s1063784217090171</mixed-citation><mixed-citation xml:lang="en">Masalov SA, Popov EO, Kolosko AG, Filippov SV, et al. Liquid-metal field electron source based on porous gap. Technical Physics. 2017;62(9):1424-1430. DOI: 10.1134/s1063784217090171</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
